• 「Development of next generation Far- and Mid- infrared detectors」 和田武彦, GCOEワークショップ「南極における赤外線天文学」 日時 2009年3月10日 (13:30)-11日(12:10) 場所 東北大学理学研究科天文学専攻大輪講室 (物理A棟8階、806号室)

  MBEやSABをつかった、シリコン基板支持型BIB型ゲルマニウム遠赤外 線画像センサーの開発

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  • 発表資料
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• KAKENHI(20244016) "次世代遠中間赤外線検出器の開発"、 和田武彦、金田英宏、廣瀬和之、渡辺健太郎

  MBEやSABにより Germanium BIB detectorsの開発に成功した

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  • 成果報告書 (2011)
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• "Development of Germanium BIB detector with surface activated bonding and Molecular-Beam Epitaxial crystal growth" by T. Wada, H. Kaneda, R. Kano, K. Wada, T. Suzuki, K. Watanabe, and Y.Kiriyama IRMMW 2010 (2010). (non-refereed)

  We have fabricated Germanium BIB detectors

  • DOI(10.1109/ICIMW.2010.5612570)
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• "Microscopic and electrical properties of Ge/Ge interfaces bonded by surface-activated wafer bonding technology" by Kentaroh Watanabe, Kensuke Wada, Hidehiro Kaneda, Kensuke Ide, Masahiro Kato, and Takehiko Wada, Jpn. J. Appl. Phys. 50 (2011) 015701 (5 pages).

  We have found that the interface between two Germanium wafers that is fabricated by the surface-activated wafer bonding technology has excellent electrical properties for BIB detectors.

  • DOI(10.1143/JJAP.50.015701)
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• "Electrical and Photoconductive Properties at 1.8 K of Germanium p+ --i Junction Device Fabricated by Surface-Activated Wafer Bonding" by Hidehiro Kaneda, Takehiko Wada, Shinki Oyabu, Ryoko Kano, Yuichi Kiriyama, Yasuki Hattori, Toyoaki Suzuki, Kensuke Ide, Masahiro Kato, and Kentaroh Watanabe, Jpn. J. Appl. Phys. 50 (2011) 066503 (5 pages).

  We have found that the p+ --i device that is fabricated by the surface-activated wafer bonding technology shows optically and electrically similar characteristics as the BIB detectors.

  • DOI: 10.1143/JJAP.50.066503
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• "Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors" by Toyoaki Suzuki, Takehiko Wada, Kazuyuki Hirose, Hironobu Makitsubo, and Hidehiro Kaneda, Publications of the Astronomical Society of the Pacific 124, (August 2012) (pp. 823-829).

  We have calculated an optimization of transeparent electrical contact on Germanium and demonstrated it by MBE technology.

  • DOI: 10.1086/667391
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  Copyright 2012, The Astronomical Society of the Pacific.

• "Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-ActivatedWafer Bonding Method for Far-Infrared Astronomy" by M. Hanaoka, H. Kaneda, S. Oyabu, M. Yamagishi, Y. Hattori, S. Ukai, K. Shichi, T. Wada, T. Suzuki, K. Watanabe, K. Nagase, S. Baba, C. Kochi, J. Low Temp. Phys. (2016) 184:225-230.

  We have made a Ge:Ga BIB detector which is sensitive up to 240 um.

  • DOI: 10.1007/s10909-016-1484-1
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