We have found a FD-SOI CMOS process with which we can fabricate both P- and N-ch MOSFETs with excellent perfomance at 4K.
Copyright 2010, American Insitute of Physics
IEICE Tech. Rep., vol. 110, no. 250, SANE2010-108, pp. 229-234, Oct. 2010.
We have developed a CMOS OP-AMP which shows excellent performance (open loop gain 7000) at 4K with low power (1uW)!
Copyright ICSANE 2010
We have developed a CMOS OP-AMP which shows excellent performance (open loop gain 7000) at 4K with low power (1uW)!
Copyright IEICE 2011
We have proved that FD-SOI-CMOS is an appropriate process for the ROIC of the next generation far-infrared imaging sensors
erratum in equation 1, a factor of c/lambda^2 is missing in the left term. No correction for table 1 is required because the calculation was done by correct way in a perl script.
Copyright 2012, Springer Science+Business Media, LLC.
We have demonstrate cryogenic operatin of a transimpedance amplifier (TIA) by the FD-SOI-CMO process
Copyright 2012, Springer Science+Business Media, LLC.
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